Integration of III-nitrides with Silicon MEM Technology

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Integration of III-nitrides with Silicon MEM Technology

    Research includes:

  • Buffer layer development for GaN growth on Si(111) and Si (100)

  • Mask and etches for GaN/Si

  • Evaluation of GaN peizoelectric sensor properties

    Support of AEA Technology is gratefully acknowledged

    Cantilever test structure for accelerometer

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Integration of III-nitrides with Silicon MEM Technology

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